Ternary static random access memory using quantum dot gate field-effect transistor PROJECT TITLE :Ternary static random access memory using quantum dot gate field-effect transistorABSTRACT:Quantum dot gate field-effect transistor (QDGFET) generates three states in their transfer characteristics. A successful model can justify the generation of third state in the transfer characteristics of the QDGFET. The innovative circuit design using QDGFET will be used to style different ternary logic. This Letter discusses the planning of ternary logic static random access memory using QDGFET. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Multimedia Takes on Societal Challenges Distributed generation in Brazil: Advances and gaps in regulation