PROJECT TITLE :
Ternary static random access memory using quantum dot gate field-effect transistor
Quantum dot gate field-effect transistor (QDGFET) generates three states in their transfer characteristics. A successful model can justify the generation of third state in the transfer characteristics of the QDGFET. The innovative circuit design using QDGFET will be used to style different ternary logic. This Letter discusses the planning of ternary logic static random access memory using QDGFET.
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