PROJECT TITLE :
Electrical Activation, Deactivation, and Reactivation Mechanism Study of Plasma Doping Processes
Advanced doping techniques in low-energy high-dose regimes as well as n-type PH3 and AsH3 plasma doping (PLAD) and p-sort B2H6 and BF3 PLAD are studied and characterized on the electrical activation, deactivation, and reactivation mechanisms. As a result of deactivation and reactivation characteristics are independent of ion species and dependent solely on the carrier, electrical-assisted diffusion of carriers (trap in native oxide) is confirmed as a hypothesis of a major dopant deactivation kinetics. Secondary ion mass spectrometry/ angle-resolved X-ray photoelectron spectroscopy and Hall ways are employed in this paper to supply more supporting evidence and knowledge. With characteristics just like those of beam-line (BL)-based implants, n-type PLAD shows a lot of serious deactivation than p-kind PLAD. n-type PLAD shows a a lot of significant reactivation impact than their BL implant counterparts. In keeping with the deactivation mechanism study, a answer was proposed and used to reduce the deactivation issue for nMOS devices.
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