Ge Photodetector Monolithically Integrated on Si by Rapid-Melting-Growth Technique PROJECT TITLE :Ge Photodetector Monolithically Integrated on Si by Rapid-Melting-Growth TechniqueABSTRACT:Germanium-based optoelectronic devices have the potential applications in optical Communication and detections. During this letter, we demonstrated that prime-quality Ge quasi-epilayer can be achieved by rapid-melting-growth and integrated-circuit compatible method. Raman and microscopy techniques revealed that the as-deposited Ge on the silicon substrate became quasi-single crystalline whereas nanocrystallites embedded inside the Ge layer. The Ge/Si heterostructure photodetectors were fabricated with desirable responsivity of zero.22 A/W at −1 V reverse bias and the ratio of photocurrent and dark current is up to 2000 at −0.65 V. This technique demonstrated the possibility of monolithic integration of Ge photodetector for future optical Communications at $one.thirty one~mu textm$ in wavelength with Si electronic circuitry. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Decentralized Inverse-Droop Control for Input-Series–Output-Parallel DC–DC Converters A High-Accuracy Metric for Predicting the Power De-Rating of RF Power Amplifiers
