Si-Schottky Photodetector Based on Metal Stripe in Slot-Waveguide Microring Resonator


We tend to present a unique Schottky contact photodetector (PD) based on internal photoemission effect (IPE) comprising of a straight air-slot-waveguide (WG) and a metal/silicide stripe buried in an exceedingly p-kind Si microring resonator (MRR) for optical Communication. Several metal/silicides are thought of for the stripe (PtSi, Pd2Si, TaSi2, and Ag). This PD benefits from the essential options of slot-WGs, MRR-based mostly PDs, and double Schottky barrier (DSB) PDs. For a TaSi2 PD using DSB S-WG-MRR with high Schottky barrier feature, numerical simulation predicts the responsivity of A/W, a bandwidth-efficiency product of GHz, and a dark current of 30 pA at space temperature. These characteristics are considerably improved compared with those reported for MRR-IPE-PDs.

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