PROJECT TITLE :
On Polarization of Compensated Detectors
This paper presents analyses of polarization effects in ohmic and junction sensors by detailed three-dimensional modeling. It's shown for the instance of compensated detectors that the compensating deep-levels will be additionally responsible for each bias-induced and ionization-induced polarization phenomena. The capture cross sections of the deep levels are shown to play a dominant role within the formation of the polarizing house charge. Calculations show that bias-induced polarization is not expected to occur in ohmic MSM structures as long because the mobility remains constant. Ionization-induced polarization is expected to occur equally in ohmic and Schottky devices, but the sign and therefore the distribution of the polarizing area charge rely on deep level cross sections.
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