Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects PROJECT TITLE :Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted EffectsABSTRACT:This work proposes a unique methodology to guage SRAM-based FPGA’s susceptibility with respect to Single-Event Upset (SEU) as a function of noise on VDD power pins, Total-Ionizing Dose (TID) and TID-imprinted effect on BlockRAM cells. The proposed procedure is demonstrated for SEU measurements on a Xilinx Spartan 3E FPGA operating in an 8 MV Pelletron accelerator for the SEU check with serious-ions, whereas TID was deposited by means of a Shimadzu XRD-7000 X-ray diffractometer. In order to watch the TID-induced imprint effect inside the BlockRAM cells, a second SEU take a look at with neutrons was performed with Americium/Beryllium ( ). The noise was injected into the ability supply bus in line with the IEC sixty one.00zero-four-twenty nine commonplace and consisted of voltage dips with sixteen.67p.c and 25% of the FPGA’s VDD at frequencies of ten Hz and five kHz, respectively. At the top of the experiment, the combined SEU failure rate, given in error/bit.day, is calculated for the FPGA’s BlockRAM cells. The combined failure rate is defined as the average SEU failure rate computed before and after exposition of the FPGA to the TID. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest A Distributed Filtering Scheme to Mitigate Harmonics in Residential Distribution Systems On Polarization of Compensated Detectors