The Influence of Different Annealing Temperatures on Graphene-Modified TiO2 for Dye-Sensitized Solar Cell


During this study, graphene/TiO2 composite films at completely different annealing temperatures from 450 to 650 °C acted as photoelectrode of dye-sensitized solar cell (DSSC). The graphene/TiO2 composite films were characterized by scanning electronic microscopy, X-ray diffractometer, and electrochemical impedance spectroscopy. The Nyquist plot is made to simulate the redox reaction of internal device at the heterojunction by the same circuit model. It is useful to analyze the element structure and promote photovoltaic conversion potency of DSSC. In step with the experiment results, the optimal annealing temperature of graphene/TiO2 composite film was 550 °C, where the open-circuit voltage was 0.seventy four ± 0.01 V, the short-circuit current density was 14.17 ± zero.32 mA/cm2, the fill issue was fifty one.0zero ± 1.ninety fivep.c, and therefore the photovoltaic conversion potency was five.thirty four ± 0.twelvepercent.

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