PROJECT TITLE :
The look of antireflection coating (ARC) for multijunction solar cells is challenging because of the broadband absorption and the necessity for current matching of every subcell. Silicon nitride, which is deposited by plasma-enhanced chemical vapor deposition (PECVD) using commonplace conditions, is widely utilized in the silicon wafer solar cell trade however typically suffers from absorption in the short-wavelength vary. We have a tendency to propose the utilization of silicon nitride deposited by low-frequency PECVD (LFSiN) optimized for top refractive index and low optical absorption as a part of the ARC design for III–V/Ge triple-junction solar cells. This material will also act as a passivation/encapsulation coating. Simulations show that the SiO$_rm 2$/LFSiN double-layer ARC can be terribly effective in reducing the reflection losses over the wavelength range of the limiting subcell for high subcell-restricted, plus middle subcell-restricted, triple-junction solar cells. We conjointly demonstrate that the structure’s performance is stable over expected variations within the layer parameters (thickness and refractive index) in the vicinity of the optimal values.
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