Separation of Series Resistance and Space Charge Region Recombination in Crystalline Silicon Solar Cells From Dark and Illuminated Current–Voltage Characteristics


The measurement of current–voltage (J–V) characteristics is one amongst the most straightforward ways for the characterization of solar cells. Consequently, an correct data of its which means is of high relevance for the comprehension and technological feedback of these devices. The internal series resistance is one limiting parameter of the fill issue and therefore the efficiency of these devices. A second limiting parameter is the p-n junction house charge region recombination. During this paper, we tend to present a methodology to work out the lumped series resistance by combining the J–V characteristics in the dark and underneath one-sun illumination. As a initial approximation, the lumped series resistance below illuminated conditions is used for the dark J–V characteristic at little currents. Based mostly on this, we tend to present a methodology to quantify resistive losses and house charge region recombination solely from the dark and illuminated J–V curves therefore that a easy separation of each losses becomes possible with all inline cell testers.

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