Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz


We have a tendency to report recent progress on GaN-on-diamond high electron mobility transistors (HEMTs) fabricated using a low-temperature device-transfer process. The devices were first fabricated on a GaN-on-SiC epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivity diamond substrate at low temperature. The ensuing $12 times fifty~mu textm$ GaN-on-diamond HEMTs demonstrated the state-of-the-art electrical characteristics, as well as a maximum drain current density of one.two A/mm and a peak transconductance of 390 mS/mm. CW load-pull measurements at 10 GHz yielded an RF output power density of eleven W/mm with fifty onep.c associated power-added potency. Device measurements show that the GaN-on-diamond devices maintained slightly lower channel temperatures than their GaN-on-SiC counterparts while delivering 3.6 times higher RF power at intervals the identical active space. These results demonstrate that the GaN device-transfer process is capable of preserving intrinsic GaN-on-SiC transistor electrical performance whereas profiting from the wonderful thermal properties of diamond substrates.

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