Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz PROJECT TITLE :Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHzABSTRACT:We have a tendency to report recent progress on GaN-on-diamond high electron mobility transistors (HEMTs) fabricated using a low-temperature device-transfer process. The devices were first fabricated on a GaN-on-SiC epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivity diamond substrate at low temperature. The ensuing $12 times fifty~mu textm$ GaN-on-diamond HEMTs demonstrated the state-of-the-art electrical characteristics, as well as a maximum drain current density of one.two A/mm and a peak transconductance of 390 mS/mm. CW load-pull measurements at 10 GHz yielded an RF output power density of eleven W/mm with fifty onep.c associated power-added potency. Device measurements show that the GaN-on-diamond devices maintained slightly lower channel temperatures than their GaN-on-SiC counterparts while delivering 3.6 times higher RF power at intervals the identical active space. These results demonstrate that the GaN device-transfer process is capable of preserving intrinsic GaN-on-SiC transistor electrical performance whereas profiting from the wonderful thermal properties of diamond substrates. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Personalized Learning Pathways: Enabling intervention creation and tracking An Ant Colony Optimization and Tabu List Approach to the Detection of Gene-Gene Interactions in Genome-Wide Association Studies [Research Frontier]
