Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time

PROJECT TITLE :

Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time

ABSTRACT:

A 60zero V high-voltage gate drive IC (HVIC) employing a novel sturdy isolation structure and a new delay circuit with low-temperature coefficient is proposed during this study. The novel isolation structure features with n--well islands alternatively arranged in the p-well region and its breakdown voltage is improved by concerning 7% (from 690 to 740 V) compared with the traditional isolation because of that the electrical field crowed in the p-well corner is ameliorated. The presented delay circuit utilized in the gate drive IC is composed of a temperature-insensitive ramp generator and a comparator. The typical turn-on/-off propagation delay time of the HVIC is 95 ns/85 ns and its maximum temperature coefficient is only 0.065 ns/°C.

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