Voltage mirror circuit by carbon nanotube field effect transistors for mirroring dynamic random access memories in multiple-valued logic and fuzzy logic


In this paper, a brand new voltage mirror circuit by using carbon nanotubes (CNTs) technology is presented. This circuit is specifically proposed for the application of duplicating multiple-valued and fuzzy dynamic random access recollections. The given structure prevents any voltage drop for the capacitor inside the memory cell. As a result, any fanout circuit will be driven. The new structure will be utilised for various multiple-valued logic systems while not a modification. The distinctive characteristics of carbon nanotube field effect transistor (CNFET) technology are exploited in this paper to fulfill the specified style goals. It demonstrates the potentials of CNFET technology in a very realistic very large-scale integration application. The proposed style is extremely tolerant to DCNT variation and it's conjointly proof against misaligned CNTs. Simulation results demonstrate that it provides sufficient driving capability with reasonable accuracy.

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