GaN Microwave DC–DC Converters

PROJECT TITLE :

GaN Microwave DC–DC Converters

ABSTRACT:

This paper presents the planning and characterization of dc–dc converters operating at microwave frequencies. The converters are based mostly on GaN transistor class-E power amplifiers (PAs) and rectifiers. Three topologies are presented, that are: 1) a PA and synchronous rectifier, requiring 2 RF inputs; 2) a PA and self-synchronous rectifier with a single RF input; and 3) an influence oscillator with a self-synchronous rectifier with no needed RF inputs. The synchronous one.2-GHz class-$hboxE^2$ converter reaches a most potency of 72% at four.6 W. By replacing the RF input at the rectifier gate with a specific termination, a self-synchronous circuit demonstrates 75% potency at 4.vi W, with a most output power of thirteen W at fifty eightp.c potency. Within the third topology, the PA is replaced by a power oscillator by providing correct feedback for class-E operation, ensuing during a circuit requiring no RF inputs. This oscillating self-synchronous dc–dc converter is demonstrated at 900 MHz with an efficiency of 79percent at 28 V and twelve.eight-W output power. Self-synchronous category-E transistor rectifier operation is analyzed theoretically in the time domain and validated with harmonic-balance simulations using an improved nonlinear model for a GaN HEMT. The simplified theoretical analysis provides a helpful starting point for prime-efficiency self-synchronous power rectifier style, that will, in turn, be extended to high-efficiency oscillating power inverter design.

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