Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers


Using GaN-on-Si epilayers, for the first time, fully vertical p-i-n diodes are demonstrated when Si substrate removal, transfer, and n-electrode formation at the prime of the device. After SiO2 sidewall passivation, the vertical p-i-n diodes, with n-GaN facing up, exhibit $V_mathrmscriptscriptstyle ON$ of three.thirty five V at 1 A/cm2, a low differential on-resistance of three.3 $textmOmega $ cm2 at 300 A/cm2, and a breakdown voltage of 350 V. The corresponding Baliga's figure of benefit is thirty seven.0 MW/cm2, a terribly smart worth for GaN-based p-i-n rectifiers grown on Si substrates. The results indicate that fully vertical rectifiers using GaN-on-Si epilayers have nice potential in achieving price-effective GaN devices for top-power and high-voltage applications.

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