PROJECT TITLE :
Highly Efficient and Multipaction-Free P-Band GaN High-Power Amplifiers for Space Applications
In this paper, the authors report upon the development of multipaction-free P-band (UHF) GaN high-power amplifiers (HPAs) with target RF output power values of a hundred and forty W and power-added potency beyond seventyp.c. Initially, two totally different 80-W class single-ended power modules were designed, manufactured, and tested using GaN devices from two totally different manufacturers. Load–pull techniques were used in both styles to attain the best tradeoff in terms of RF output power, potency, and stability. Secondly, two identical power modules are combined during a balanced architecture so as to get the required level of RF output power. Multipaction analyses and tests have been carried out to guarantee reliable operation in area. The HPAs have been characterised over temperature from $-hbox15 ^circhboxC$ to $+hbox55 ^circhboxC$ in pulsed and constant-wave conditions, showing negligible drifts over temperature and multipaction-free operation. RF output power in more than a hundred and eighty W at seventypercent drain potency is also demonstrated.
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