Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems PROJECT TITLE :Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic SystemsABSTRACT:Spin-transfer torque magnetic memory (STT-MRAM) is currently under intense academic and industrial development, since it options non-volatility, high write and scan speed and high endurance. During this work, we tend to show that when employed in a non-typical regime, it will additionally act as a stochastic memristive device, appropriate to implement a “synaptic” function. We introduce basic concepts regarding spin-transfer torque magnetic tunnel junction (STT-MTJ, the STT-MRAM cell) behavior and its possible use to implement learning-capable synapses. 3 programming regimes (low, intermediate and high current) are identified and compared. System-level simulations on a task of vehicle counting highlight the potential of the technology for learning systems. Monte Carlo simulations show its robustness to device variations. The simulations additionally enable comparing system operation when the different programming regimes of STT-MTJs are used. As compared to the high and low current regimes, the intermediate current regime permits minimization of energy consumption, while retaining a high robustness to device variations. These results open the way for unexplored applications of STT-MTJs in sturdy, low power, cognitive-sort systems. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Characteristic Analysis and Verification of the Magnetic-Field-Modulated Brushless Double-Rotor Machine Adaptation of the E-model for satellite internet protocol radio calls in air traffic control
