PROJECT TITLE :
12T Memory Cell for Aerospace Applications in Nano scale CMOS Technology - 2017
In this paper, a novel radiation-hardened-by-design (RHBD) 12T memory cell is proposed to tolerate single node upset and multiple-node upset based on upset physical mechanism behind soft errors together with cheap layout-topology. The verification results obtained confirm that the proposed 12T cell can offer a sensible radiation robustness. Compared with 13T cell, the increased area, power, read/write access time overheads of the proposed 12T cell are -18.ninep.c, -twenty three.8%, and 171.6%/-fifty.0%, respectively. Moreover, its hold static noise margin is 986.a pair of mV that is beyond that of 13T cell. This suggests that that the proposed 12T cell also has higher stability when it provides fault tolerance capability.
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