Millimeter-Wave Transmission Line in 90-nm CMOS Technology


A twice interleaved metal patterns is proposed for decreasing transmission line loss and maintaining operating bandwidth when using 90-nm complementary metal–oxide–semiconductor technology. 3 transmission lines are implemented during this experiment. The measurement results show that the situation of interleaved metal patterns in metal-one and metal-two films decreases the attenuation constant and will increase the operating bandwidth compared to the conventional transmission line. To deeply understand the phenomenon, the effective height is calculated to analyze the experiment result. The comparison results show the proposed and conventional transmission lines get attenuation constants of zero.twenty six dB/mm and zero.seventy one dB/mm at 40 GHz . The proposed transmission line will doubtless make huge improvements in millimeter-wave operation.

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