Characterizing Radiation and Stress-Induced Degradation in an Embedded Split-Gate NOR Flash Memory PROJECT TITLE :Characterizing Radiation and Stress-Induced Degradation in an Embedded Split-Gate NOR Flash MemoryABSTRACT:Radiation and stress-induced degradation are characterised in split-gate NOR flash cells through a set of distinctive experiments. Radiation and program/erase stress on the bit cells is shown to make each positive and negative traps within the oxide around the floating gate cell. The annealing temperature following radiation determines the speed at which oxide traps are neutralized. To investigate each program/erase and radiation induced harm in bigger detail; partial program and erase operations are performed. The implications of this work for both radiation hardness assurance testing and device reliability are discussed. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Has Time Come to Switch From Duty-Cycled MAC Protocols to Wake-Up Radio for Wireless Sensor Networks? Experimental Analysis of Vapor HF Etch Rate and Its Wafer Level Uniformity on a CMOS-MEMS Process
