Characterizing Radiation and Stress-Induced Degradation in an Embedded Split-Gate NOR Flash Memory


Radiation and stress-induced degradation are characterised in split-gate NOR flash cells through a set of distinctive experiments. Radiation and program/erase stress on the bit cells is shown to make each positive and negative traps within the oxide around the floating gate cell. The annealing temperature following radiation determines the speed at which oxide traps are neutralized. To investigate each program/erase and radiation induced harm in bigger detail; partial program and erase operations are performed. The implications of this work for both radiation hardness assurance testing and device reliability are discussed.

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