PROJECT TITLE :
Revisiting the Theory of Ferroelectric Negative Capacitance
In this paper, we have a tendency to revisit the speculation of negative capacitance in: one) a standalone ferroelectric; a pair of) a ferroelectric–dielectric; and 3) a ferroelectric–semiconductor series combination, and show that it is necessary to attenuate the overall Gibbs free energy of the combined system (and not just the free energy of the ferroelectric) to get the correct states. The theory is explained each analytically and using numerical simulation, for ferroelectric materials with the first-order and second-order phase transitions. The exact conditions for various regimes of operation in terms of hysteresis and gain are derived for ferroelectric–dielectric combination. Finally, the ferroelectric–semiconductor series combination is analyzed to achieve insights into the likelihood of realization of steep slope transistors in a hysteresis-free manner.
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