Positive Gate Bias and Temperature-Induced Instability of $alpha $ -InGaZnO Thin-Film Transistor With ZrLaO Gate Dielectric PROJECT TITLE :Positive Gate Bias and Temperature-Induced Instability of $alpha $ -InGaZnO Thin-Film Transistor With ZrLaO Gate DielectricABSTRACT:The effects of Na+, Mg2 +, Ca2 +, Sr2 + and Ba2 + doping on the scintillation properties of CeBr3 are evaluated during this paper. Ca2 + and Sr2 + doped CeBr3 show completely different scintillation properties as compared to undoped CeBr3, i.e. a further perturbed Ce3 + website with emission maxima red-shifted by 30 nm compared to unperturbed Ce3 + sites as evidenced by X-ray excited emission and photoluminescence measurements. Also an almost constant lightweight yield at temperatures below three hundred K, an increased decay time and the looks of multiple glow peaks in thermoluminescence measurements are observed for Ca and Sr doped CeBr3. These effects on the scintillation properties of CeBr3 are explained using a single lure model where Br vacancies, shaped as charge compensation for the aliovalent dopants, act as electron traps. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Robust Model-Based Fault Diagnosis for PEM Fuel Cell Air-Feed System Revisiting the Theory of Ferroelectric Negative Capacitance
