PROJECT TITLE :
High-Performance E-Band Transceiver Chipset for Point-to-Point Communication in SiGe BiCMOS Technology
Two totally integrated chipsets covering the complete E-band frequency vary, 71-seventy six/eighty one-eighty six GHz, are demonstrated. These designs, which were implemented in 0.13- μm SiGe BiCMOS technology, use a sliding IF superheterodyne design. The receiver (Rx) chips include a picture-reject low-noise amplifier, RF-to-IF mixer, variable gain IF amplifier (IF VGA), quadrature IF-to-baseband (BB) de-modulator, tunable BB filter, section-locked loop (PLL) synthesizer, and a frequency quadrupler. At space temperature the Rx chips achieve a maximum gain of 73 dB, 6-dB noise figure, higher than -twelve-dBm input third-order intercept point, additional than 65-dB dynamic vary, and consume 60zero mW for lower band (LB) (71-76 GHz) and better band (HB) (eighty one-eighty six GHz) alike. The transmitter (Tx) chips embrace an influence amplifier, image reject driver, variable RF attenuators, power detector, IF-to-RF up-converting mixer, IF VGA, quadrature BB-to-IF modulator, PLL, and a frequency multiplier. The Tx chips achieve a power one-dB compression point (P1dB) of seventeen.five/sixteen.six dBm, saturated power (Psat) of 20.five/eighteen.8 dBm on one-ended output, up to thirty-nine-dB gain with an analog controlled dynamic range of 30 dB, and consumes one.75/one.eight W for the LB and HB, respectively. This state-of-the-art performance allows the usage of complicated modulations and high-capacity transmission.
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