PROJECT TITLE :

A Low-Power, Low-Cost Infra-Red Emitter in CMOS Technology

ABSTRACT:

During this paper, we present the look and characterization of an occasional-power low-value infra-red emitter based on a tungsten micro-hotplate fabricated in an exceedingly commercial one-μm silicon on insulator-CMOS technology. The device has a 250-μm diameter resistive heater inside a 600-μm diameter thin dielectric membrane. We first present electro-thermal and optical device characterization, long term stability measurements, and then demonstrate its application as a gas sensor for a domestic boiler. The emitter contains a dc power consumption of only 70 mW, a total emission of 0.eight mW across the two.5-15-μm wavelength vary, a fiftyp.c frequency modulation depth of 70 Hz, and glorious reproducibility from device-to-device. We conjointly compare 2 larger emitters (heater size of 60zero and 180zero μm) created in the same technology that have a abundant higher infra-red emission, but at the detriment of upper power consumption. Finally, we tend to demonstrate that carbon nanotubes can be used to significantly enhance the thermo-optical transduction efficiency of the emitter.


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