Leakage Current Reduction Using 350-nm Ultra-Violet Irradiation in P-Channel Polycrystalline-Silicon Thin-Film Transistors


We have a tendency to developed a unique technique to reduce the gate-induced drain leakage (GIDL) current by a easy methodology using the 350-nm ultraviolet (UV) irradiation at 300 W. The pinning GIDL current was reduced from ninety fourp.c while not any pinning, and the threshold voltage was shifted from $-$6 to $-$2 V when 1000 s. The mechanism of the GIDL current reduction is deeply investigated and confirmed by the density of states, drain activation energy $(rm E_rm a)$, and extraction of grain-boundary traps $(rm N_rm t ) $. The density of acceptor-like states will increase with the increase in UV exposure. The shift in Fermi level faraway from the valence band to the conduction band under the UV irradiation is the most proposed mechanism for the GIDL current reduction.

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