PROJECT TITLE :

Evidence for Enhanced Reliability in a Novel Nanoscale Partially-Depleted SOI MOSFET

ABSTRACT:

This paper presents a new partially-depleted silicon-on-insulator (SOI) metal–oxide–semiconductor field impact transistor so as to enhance the reliability successfully. An interfacial layer with the heavily doped $hboxn^+$ and $hboxp^+$ silicon is presented between the buried oxide and therefore the source and channel regions. The presence of the interfacial layer causes the potential distribution changed within the channel, and the minimum potential is pushed toward the interfacial layer, and so, the floating-body result, that is one in all vital factors to characterize the reliability, is impressively reduced, and therefore, reliability of the proposed structure will increase. Several main characteristics have been evaluated to check the proposed structure performance with that of a typical SOI. With regard to simulated transient, dc, and small-signal behaviors, the proposed structure shows marvelous performance improvement when put next with the conventional SOI.