A High-Q Terahertz Resonator for the Measurement of Electronic Properties of Conductors and Low-Loss Dielectrics


The successful engineering of sources and elements within the terahertz (THz) regime advantages from sensible characterization of materials properties. Previous research reports have shown that calculations of fabric parameters that are valid at radio frequencies are no longer correct at THz frequencies. A high-quality-factor quasi-optical hemispherical resonator operating between three hundred GHz–1 THz has been designed and implemented for the measurement of electronic properties of conductors with low-loss dielectrics. This apparatus is the primary quasi-optical resonator to attain $Qapprox 4times 10^5$ at frequencies bigger than 400 GHz in the THz regime. It is conjointly the primary open resonator designed to live effective conductivity at these frequencies. This paper discusses the techniques that enabled high-$Q$ operation in the THz regime. It also includes measurements of silicon with totally different doping densities and conductors of various surface roughness values with comparison to theoretical predictions.

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