A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop


A high-power 320 GHz transmitter using a hundred thirty nm SiGe BiCMOS technology ($f_T/f_max =$ 220/280 GHz) is reported. This transmitter consists of a four × four array of radiators based mostly on coupled harmonic oscillators. By incorporating a signal filter structure known as come back-path gap coupler into a differential self-feeding oscillator, the proposed 320 GHz radiator simultaneously maximizes the basic oscillation power, harmonic generation, furthermore on-chip radiation. To facilitate the TX-RX synchronization of a future terahertz (THz) heterodyne imaging chipset, a absolutely-integrated phase-locked loop (PLL) is additionally implemented in the transmitter. Such on-chip section-locking capability is the first demonstration for all THz radiators in silicon. Within the so much-field measurement, the total radiated power and EIRP of the chip is three.3 mW and twenty two.5 dBm, respectively. The transmitter consumes 610 mW DC power, that leads to a DC-to-THz radiation potency of zero.54percent. To the authors' best knowledge, this work presents the highest radiated power and DC-to-THz radiation potency in silicon-primarily based THz radiating sources.

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