A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop PROJECT TITLE :A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked LoopABSTRACT:A high-power 320 GHz transmitter using a hundred thirty nm SiGe BiCMOS technology ($f_T/f_max =$ 220/280 GHz) is reported. This transmitter consists of a four × four array of radiators based mostly on coupled harmonic oscillators. By incorporating a signal filter structure known as come back-path gap coupler into a differential self-feeding oscillator, the proposed 320 GHz radiator simultaneously maximizes the basic oscillation power, harmonic generation, furthermore on-chip radiation. To facilitate the TX-RX synchronization of a future terahertz (THz) heterodyne imaging chipset, a absolutely-integrated phase-locked loop (PLL) is additionally implemented in the transmitter. Such on-chip section-locking capability is the first demonstration for all THz radiators in silicon. Within the so much-field measurement, the total radiated power and EIRP of the chip is three.3 mW and twenty two.5 dBm, respectively. The transmitter consumes 610 mW DC power, that leads to a DC-to-THz radiation potency of zero.54percent. To the authors' best knowledge, this work presents the highest radiated power and DC-to-THz radiation potency in silicon-primarily based THz radiating sources. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest A 5 GS/s 150 mW 10 b SHA-Less Pipelined/SAR Hybrid ADC for Direct-Sampling Systems in 28 nm CMOS A Blocker-Tolerant Inductor-Less Wideband Receiver With Phase and Thermal Noise Cancellation
