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Low-power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal–oxide semiconductor technology

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PROJECT TITLE :

Low-power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal–oxide semiconductor technology

ABSTRACT:

The authors present an occasional-power 850 nm Si optoelectronic integrated circuit (OEIC) receiver fabricated in normal sixty five nm complementary metal-oxide semiconductor (CMOS) technology. They analyse power consumption of previously reported CMOS OEIC receivers and determine the authors receiver design for low-power operation. Their OEIC receiver consists of a CMOS-compatible avalanche photodetector and electronic circuits that embrace an inverter-based mostly transimpedance amplifier, a tunable equaliser and a post amplifier. With the fabricated OEIC receiver, they successfully demonstrate eight Gb/s operation with a touch-error rate <;10-twelve at incident optical power of -four.5 dBm. Their OEIC receiver consumes 5 mW with 1.two V provide voltage. To the most effective of their data, their OEIC receiver achieves all-time low energy efficiency among 850 nm CMOS OEIC receivers.


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Low-power 850 nm optoelectronic integrated circuit receiver fabricated in 65 nm complementary metal–oxide semiconductor technology - 4.8 out of 5 based on 46 votes

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