Spectral Evidence of Si Complexes in HVPE-Grown GaAs ABSTRACT:Evidence of Si complexes was discovered in low temperature photoluminescence (PL) spectra recorded from GaAs grown by hydride vapor phase epitaxy and were measured as a function of secondary HCl flow. In addition, time resolved PL of the samples measured long radiative lifetimes, substantiating the excellent quality of the crystalline growth. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Physical Model for the Small-Scale Residual Topography in Chemical Mechanical Polishing Study of Bubble Activity in a Megasonic Field Using an Electrochemical Technique