Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Abnormal Electrical and Optical Characteristics of InGaN-Based LEDs by Current Stress-Time-Dependent Annihilation

1 1 1 1 1 Rating 4.89 (37 Votes)

PROJECT TITLE :

Abnormal Electrical and Optical Characteristics of InGaN-Based LEDs by Current Stress-Time-Dependent Annihilation

ABSTRACT:

We investigated the behavior of forward leakage current and the related reliability of InGaN-based light emitting diodes with medium constant current (current density J = 17 Acm2) stress up to 1000 h. When the time of the constant current stress was less than 250 h, the forward leakage current of a sample rapidly increased to 3.8 μA at 2 V, almost three orders higher in magnitude compared to the value before the stress. Further increasing the stress-time, however, the degradation of the forward current was partially recovered to a certain extent, but not completely. It is believed that this abnormal electrical characteristic is due to the stress-time-dependent creation and annihilation of the tunneling path in the active quantum well region.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Abnormal Electrical and Optical Characteristics of InGaN-Based LEDs by Current Stress-Time-Dependent Annihilation - 4.9 out of 5 based on 37 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...