Structural, Electrical, and UV Detection Properties of ZnO/Si Heterojunction Diodes


This paper reports the structural, electrical, and ultraviolet (UV) light-weight detection properties of n-ZnO/p-Si heterojunction diodes. The ZnO nanocrystalline skinny films were deposited over p-Si (a hundred) substrates using RF sputter deposition. The structural and surface morphological properties of the deposited films were studied using X-ray diffractometry, atomic force microscopy, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. Results make sure the popular -axis growth of the nanocrystalline films with hexagonal wurtzite structure. The junction properties of ZnO/Si heterojunction diodes were investigated using current–voltage and capacitance–voltage measurements. The fabricated diodes exhibit a high rectification ratio of at ±five V. The ideality factor of the fabricated diodes was found to decrease from three.2 to 1.7 when measurement temperature was increased from 303 to 403 K, whereas the barrier height increased from 0.seventy four to 0.ninety six eV in the identical temperature range. Varied alternative parameters, such as designed-in potential, donor concentration, and depletion width, have also been evaluated. The UV detection properties of our fabricated structures were investigated employing a UV lamp of 365-nm wavelength. The fabricated diodes show a very good response toward UV light. The values of responsivity and detectivity were found to be zero.35 A/W and mHz , respectively.

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