InGaN Solar Cells: Present State of the Art and Important Challenges


Solar cells are a promising renewable and carbon-free electric energy resource to handle the fossil-fuel shortage and world warming. Energy conversion efficiencies over 40% have been recently achieved using standard III–V semiconductor compounds as photovoltaic materials. The revision of InN bandgap to a a lot of narrower worth has extended the fundamental bandgap of the cluster III-nitride alloy system over a wider spectral region (from zero.sixty four eV for InN to 3.four eV for GaN or six.2 eV for AlN), raising the likelihood of a selection of latest applications. The tunable bandgap, predicted high radiation resistance, and strong absorption coefficient of the In $_x$Ga $_ 1-x$N material system are promising for top-potency photovoltaic systems. Throughout the past few years, the interest in In $_x$Ga$_ 1-x$N solar cells has been exceptional. The event of high-performance solar cells using In $_x$Ga $_1-x$N materials is one amongst the most important goals in comparison with the prevailing solar cells using Si and different III–V materials. Vital efforts and progress have been made toward this goal, while nice opportunities and grand challenges coexist. During this paper, we gift a review on the present state of the art of In$_x$Ga$_1-x$N-based mostly solar cells. The foremost necessary challenges toward the high-potency In $_x$Ga$_ 1-x$N-based solar cells are discussed within the context of the recent results.

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