Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes

1 1 1 1 1 Rating 4.88 (24 Votes)

PROJECT TITLE :

Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes

ABSTRACT:

We have a tendency to demonstrate a 2-dimensional (2D) multilayered molybdenum disulfide (MoS2) transistor with molybdenum (Mo) facet and edge contacts, which is deposited using a dc-sputtering method. It exhibits field-impact mobility of 23.9 cm2/Vs and ON/OFF ratio of 106 in a linear region. A current-voltage study under different temperatures (three hundred-393 K) reveals that the Mo-MoS2 transistor shows a band transport characteristics, and a Schottky barrier height of 0.fourteen eV is estimated using a thermionic emission theory. Finally, the aspect and edge contacts of Mo-MoS2 are confirmed through the transmission electron microscope analysis. Our results not solely show that Mo will be another contact metal to different low work-operate metals however conjointly that the sting contact could play an necessary role in resolving the performance degradation over thickness increase of the MoS2 channel layer.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes - 4.9 out of 5 based on 24 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...