Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes


We have a tendency to demonstrate a 2-dimensional (2D) multilayered molybdenum disulfide (MoS2) transistor with molybdenum (Mo) facet and edge contacts, which is deposited using a dc-sputtering method. It exhibits field-impact mobility of 23.9 cm2/Vs and ON/OFF ratio of 106 in a linear region. A current-voltage study under different temperatures (three hundred-393 K) reveals that the Mo-MoS2 transistor shows a band transport characteristics, and a Schottky barrier height of 0.fourteen eV is estimated using a thermionic emission theory. Finally, the aspect and edge contacts of Mo-MoS2 are confirmed through the transmission electron microscope analysis. Our results not solely show that Mo will be another contact metal to different low work-operate metals however conjointly that the sting contact could play an necessary role in resolving the performance degradation over thickness increase of the MoS2 channel layer.

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