Point-Contacting by Localized Dielectric Breakdown With Breakdown Fields Described by the Weibull Distribution


We tend to report on the purpose-contacting by localized dielectric breakdown (PLDB) technique applied to create ohmic contacts at space temperature, to silicon test structures with regionally doped surface regions and four dielectrics commonly used for surface passivation in silicon solar cells. Our results show that the statistical distribution of the electric field at breakdown for these samples will be fitted with a Weibull distribution, indicating that a percolation model used for dielectric failure can be used to describe this method. Poole-Frenkel field-assisted hopping conduction was identified as being the dominant conduction mechanism for all of the passivating layers, however, no correlation between leakage current and breakdown field was observed. Despite the dearth of a predictive model for the breakdown field, the PLDB technique can be applied to structures with a number of various dielectric layers, delivering a coffee-resistance ohmic contact while not the requirement for top-temperature processing steps.

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