Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology


Although close to-threshold (Vth) operation is an attractive methodology for energy and performance-constrained applications, it suffers from problems in terms of circuit stability, significantly, for static random access memory (SRAM) cells. This temporary proposes a close to-Vth 9T SRAM cell implemented during a twenty two-nm FinFET technology. The read buffer of the proposed cell ensures browse stability by decoupling the stored node from the scan bit-line and improves browse performance using a one-transistor browse path. Energy and standby power are reduced by eliminating the sub-Vth leakage current in the scan buffer. For correct sensing yield estimation, a brand new yield-estimation method is additionally proposed, that considers the dynamic trip voltage. The proposed SRAM cell will achieve a minimum operating voltage of zero.three V.

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