Epitaxial growth of graphene thin film by pulsed laser deposition PROJECT TITLE :Epitaxial growth of graphene thin film by pulsed laser depositionABSTRACT:Epitaxial graphene films have been prepared by pulsed laser deposition. X-ray photoelectron spectroscopy analysis shows that the carbon binding energy is 284.seven eV, equivalent to sp2-C. Raman spectroscopy indicates that there exists 2D and D peaks and therefore graphene structures have been shaped. Meanwhile, per high-resolution transmission electron microscopy analysis, suitable depositing temperature for graphene films is found to be 873 K and the one oriented crystal domains of graphene are observed solely with the condition of one hundred pulses laser. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest MSU Tailbot: Controlling Aerial Maneuver of a Miniature-Tailed Jumping Robot Novel Noncontact Dry Electrode With Adaptive Mechanical Design for Measuring EEG in a Hairy Site
