Epitaxial growth of graphene thin film by pulsed laser deposition


Epitaxial graphene films have been prepared by pulsed laser deposition. X-ray photoelectron spectroscopy analysis shows that the carbon binding energy is eV, equivalent to sp2-C. Raman spectroscopy indicates that there exists 2D and D peaks and therefore graphene structures have been shaped. Meanwhile, per high-resolution transmission electron microscopy analysis, suitable depositing temperature for graphene films is found to be 873 K and the one oriented crystal domains of graphene are observed solely with the condition of one hundred pulses laser.

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