Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing Studies


Deep levels were investigated by the capacitance mode deep-level transient spectroscopy (C-DLTS) on 4H-SiC Schottky barrier diodes fabricated on -thick n-sort 4H-SiC epitaxial layers. C-DLTS scans from eighty K to 800 K revealed the presence of Ti(c), , , and defect levels within the energy range from 0.seventeen to one.half-dozen eV below the conduction band edge. The annealing out of primary defects and generation of secondary defects were investigated by systematic and thorough C-DLTS studies from previous and subsequent isochronal annealing in the temperature vary from 100 °C to 800 °C. The capture cross-section of Ti(c) was observed to decrease up to 400 °C and remained unchanged at higher annealing temperatures. Defect densities were shown to decrease up to 200 °C and gradually increase at higher temperatures. The and defect parameters showed similar variation for the temperature vary studied. The thermal evolutions of these deep levels in n-type 4H-SiC epitaxial layers are analyzed and discussed for the primary time.

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