Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing Studies PROJECT TITLE :Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing StudiesABSTRACT:Deep levels were investigated by the capacitance mode deep-level transient spectroscopy (C-DLTS) on 4H-SiC Schottky barrier diodes fabricated on -thick n-sort 4H-SiC epitaxial layers. C-DLTS scans from eighty K to 800 K revealed the presence of Ti(c), , , and defect levels within the energy range from 0.seventeen to one.half-dozen eV below the conduction band edge. The annealing out of primary defects and generation of secondary defects were investigated by systematic and thorough C-DLTS studies from previous and subsequent isochronal annealing in the temperature vary from 100 °C to 800 °C. The capture cross-section of Ti(c) was observed to decrease up to 400 °C and remained unchanged at higher annealing temperatures. Defect densities were shown to decrease up to 200 °C and gradually increase at higher temperatures. The and defect parameters showed similar variation for the temperature vary studied. The thermal evolutions of these deep levels in n-type 4H-SiC epitaxial layers are analyzed and discussed for the primary time. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Aggregate Discounted Warranty Cost Forecast for a New Product Considering Stochastic Sales Highly Parallelized Pattern Matching Hardware for Fast Tracking at Hadron Colliders