Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane PROJECT TITLE :Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxaneABSTRACT:Top-gated epitaxial graphene nanoribbon (EGNR) field effect transistors (FETs) were fabricated on epitaxial graphene substrates which demonstrated the opening of a substantial bandgap. Hydrogen silsesquioxane (HSQ) was used for the patterning of 10 nm size linewidth as well as a seed layer for atomic layer deposition (ALD) of a high-k dielectric aluminum oxide (Al2O3). It is found that the resolution of the patterning is affected by the development temperature, electron beam dose, and substrate materials. The chosen gate stack of HSQ followed by Al2O3 ALD permits stable device performance and enables the demonstration of the EGNR-FET. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Effect of functionalization on the electrostatic charging, tunneling, and Raman spectroscopy of epitaxial graphene Enormous shrinkage of carbon nanotubes by supersonic stress and low-acceleration electron beam irradiation
