Nanogap Embedded Transistor for Investigation of Charge Properties in DNA


A replacement structure to research the charge trapping characteristics of a DNA is proposed. The structure of the proposed device is a field result transistor (FET) with a nanogap in the dielectric layer. With the proposed device, the charge trapping characteristics of the DNA are confirmed while not any adhesion problems and electrical contact instability. The extraction of both electron and hole trapping characteristics were analyzed with an n-channel and a p-channel FET, respectively. The results showed that guanine has lots of hole entice sites with a shallow energy level, which explains why hole hopping dominantly occurs in the guanine base.

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