Realization of a Piezophototronic Device Based on Reduced Graphene Oxide/MoS2 Heterostructure PROJECT TITLE :Realization of a Piezophototronic Device Based on Reduced Graphene Oxide/MoS2 HeterostructureABSTRACT:During this letter, we tend to gift a piezophototronic device based mostly on reduced graphene oxide (rGO)/MoS2 heterostructure on a versatile substrate. Here, we have a tendency to profit from the semiconducting and piezoelectric behaviors of MoS2 sheets, besides the two-D properties of rGO sheets. To elaborate the piezophototronic behavior, 1st, we tend to have studied the strain-induced and optoelectronic behaviors separately. It is shown that the rGO sheets play a dominant role in stress-induced variations of the electrical behavior of rGO/MoS2-based mostly device. On the other hand, utilizing MoS2 sheets leads to increasing the photoresponsivity of rGO/MoS2-primarily based photodetector by a factor of concerning two.one, comparing with rGO-based mostly device (at $lambda ,=, 450$ nm). Finally, the investigated piezophototronic behavior of the realized rGO/MoS2-primarily based device proves a responsivity enhancement of $sim 97$ %, by applying illumination and alternative strain (0.03%) simultaneously. The observed responsivity enhancement is attributed to the strain-induced piezopotential in MoS2 sheets, and the modulation of the Schottky barrier at rGO/MoS2 interface. The achieved results open up promising horizons for the coupling superior properties of MoS2 sheets, to comprehend new generation of high performance optoelectronic devices. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Methods to Enhance the Performance of InGaAs/InP Heterojunction Tunnel FETs Interface Trap Density Estimation in FinFETs Using the Method in the Subthreshold Regime