Realization of a Piezophototronic Device Based on Reduced Graphene Oxide/MoS2 Heterostructure


During this letter, we tend to gift a piezophototronic device based mostly on reduced graphene oxide (rGO)/MoS2 heterostructure on a versatile substrate. Here, we have a tendency to profit from the semiconducting and piezoelectric behaviors of MoS2 sheets, besides the two-D properties of rGO sheets. To elaborate the piezophototronic behavior, 1st, we tend to have studied the strain-induced and optoelectronic behaviors separately. It is shown that the rGO sheets play a dominant role in stress-induced variations of the electrical behavior of rGO/MoS2-based mostly device. On the other hand, utilizing MoS2 sheets leads to increasing the photoresponsivity of rGO/MoS2-primarily based photodetector by a factor of concerning, comparing with rGO-based mostly device (at $lambda ,=, 450$ nm). Finally, the investigated piezophototronic behavior of the realized rGO/MoS2-primarily based device proves a responsivity enhancement of $sim 97$ %, by applying illumination and alternative strain (0.03%) simultaneously. The observed responsivity enhancement is attributed to the strain-induced piezopotential in MoS2 sheets, and the modulation of the Schottky barrier at rGO/MoS2 interface. The achieved results open up promising horizons for the coupling superior properties of MoS2 sheets, to comprehend new generation of high performance optoelectronic devices.

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