PROJECT TITLE :
Interface Trap Density Estimation in FinFETs Using the Method in the Subthreshold Regime
During this paper, we show that the subthreshold current–voltage characteristic will be used for estimating the interface lure density as a function of the energy in fully depleted symmetric metal-oxide-semiconductor devices with a minimum amount of modeling. The method is analyzed using TCAD simulations, and illustrated with the measurements on n-type silicon-on-insulator FinFETs. The results indicate that the trap density can be extracted between $sim 0.sixty five$ and 0.90 eV. This range is limited by resolution problems at the lowest current levels, and by the transition from subthreshold to saturation behavior at the high current levels.
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