Spin Circuit Representation for the Spin Hall Effect


Spin circuits with four element voltages and currents are developed and used in the past to analyze numerous structures, that embody non-collinear ferromagnets. Recent demonstrations of large spin orbit torques in significant metals like Pt, Ta, and W open up new prospects in spintronic applications by providing another means to jot down data into a magnet. Here, we tend to extend the four part (one charge and 3 spins) conductance matrix to include materials with spin Hall result based mostly on the quality diffusion equation. Our proposed spin circuit successfully reproduces standard results like spin Hall impact (SHE), inverse spin Hall impact, and spin Hall magnetoresistance. This circuit representation also makes it simple to investigate new configurations. We present two examples, particularly, one) the possibility of spin injection using large SHE (GSHE) materials into semiconductors without tunneling barriers, and a couple of) the impact of spin ground on one surface to boost spin current injection from the alternative surface in a thin GSHE sample. Finally, we provide an elemental conductance matrix for a small cubic structure which can be used as a building block to research any arbitrarily shaped GSHE material.

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