Ionic Metal–Oxide TFTs for Integrated Switching Applications PROJECT TITLE :Ionic Metal–Oxide TFTs for Integrated Switching ApplicationsABSTRACT:Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially people who can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.half dozen A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of advantage of 359 nC was experimentally determined for 0.75- long-channel devices, and thru scaling forty five.9 nC is achievable for 11 V-rated devices (where is ON-state drain–supply resistance, and is gate charge). An RF switch cutoff frequency of 25 GHz was measured for the identical 0.75- TFT, whereas exceeding five hundred GHz and power handling within the tens of watts are projected with optimization. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest API Harmony: Graph-based search and selection of APIs in the cloud A thermal margin preservation scheme for interactive multimedia consumer electronics