InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE ABSTRACT:This work demonstrates the first true blue laser diodes (LDs) grown by plasma assisted molecular beam epitaxy that operate at the region of 450–460 nm. The single quantum well LDs were grown on several types of c-plane bulk GaN substrates, with threading dislocation densities varying from 104 to 108cm-2. The key factors that allowed the authors to achieve lasing in true-blue wavelengths are improvements in the growth technology of the InGaN quantum wells attributed to the high nitrogen flux used and the design of the LD structure, which reduced the light losses in the cavity. The authors discuss the influence of the diodes’ design on the parameters of LDs. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy
