Quantification of cesium surface contamination on silicon resulting from SIMS analysis PROJECT TITLE :Quantification of cesium surface contamination on silicon resulting from SIMS analysisABSTRACT:In order to improve the understanding of unintended cesium (Cs) contamination that occurs during SIMS depth profiling, Cs concentrations on sample surfaces were measured before analysis and at various distances from a depth profile crater after analysis. Cs concentrations in excess of 1 at. % were found directly adjacent to the depth profile analysis site. Cs was also detected at significant concentrations hundreds of micrometers from the depth profile measurement location. This Cs contamination can originate from a number of sources including Cs beam tails, Cs neutral beam, and secondary sputtering from instrument optics and other structures. Since the presence of cesium significantly affects the secondary ion yield of electronegative elements (e.g., phosphorus) in silicon, the unintended presence of cesium on the surface of a previously analyzed sample can strongly affect the reproducibility and accuracy of low dose electronegative element measurements, especially at the surface. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation Enhanced green emission from UV down-converting Ce3+–Tb3+ co-activated ZnAl2O4 phosphor
