A Sub-mW, Ultra-Low-Voltage, Wideband Low-Noise Amplifier Design Technique - 2015
This project presents a style methodology for an ultra-low-power (ULP) and ultra-low-voltage (ULV) ultra-wideband (UWB) resistive-shunt feedback low-noise amplifier (LNA). The ULV circuit style challenges are discussed and a new biasing metric for ULV and ULP styles in deep-submicrometer CMOS technologies is introduced. Series inductive peaking in the feedback loop is analyzed and utilized to reinforce the bandwidth and noise performance of the LNA. Exploiting the new biasing metric, the look methodology, and series inductive peaking in the feedback loop, a 0.5 V, zero.75-mW broadband LNA with a current reuse theme is implemented in a very ninety-nm CMOS technology. Measurement results show 12.half-dozen-dB voltage gain, 0.one-seven-GHz bandwidth, five.5-dB NF, -nine-dBm IIP3, and -18-dB P1dB while occupying zero.twenty three mm2.
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