Nanoscale-RingFET: An Analytical Drain Current Model Including SCEs PROJECT TITLE :Nanoscale-RingFET: An Analytical Drain Current Model Including SCEsABSTRACT:During this paper, using a two-D Poisson equation (in cylindrical coordinates), an analytical drain current model of a nanoscale RingFET architecture has been developed for the first time. Major short-channel effects, such as channel length modulation, velocity scattering, and drain-induced barrier lowering, are taken beneath consideration while developing the model. A bandgap narrowing model has been utilized to analyze the impact of higher channel doping. The modeled results of the surface potential, electrical field, threshold voltage ( ), subthreshold slope, and drain current are verified by comparing with those of the ATLAS three-D device simulation. The influence of the drain radius and position of the supply/drain regions on the electrical characteristics of the device has additionally been demonstrated. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Transistor–resistor-stacked voltage-mode PAM-4 symbol generator with improved linearity A New Sensorless Hybrid MPPT Algorithm Based on Fractional Short-Circuit Current Measurement and P O MPPT
