Transistor–resistor-stacked voltage-mode PAM-4 symbol generator with improved linearity PROJECT TITLE :Transistor–resistor-stacked voltage-mode PAM-4 symbol generator with improved linearityABSTRACT:To address the restricted linearity range of current-mode logic circuits used for four-level pulse amplitude modulation (PAM-4) image generation, a voltage-mode, inverter-like circuit that includes a stacked transistor-resistor structure is proposed. Simulation results have shown that the linearity of the proposed PAM-four circuit has been improved by 43.one%, with a modest increase of circuit area. Additionally, 20percent resistance mismatch in the proposed PAM-4 symbol generator ends up in linearity degradation of <;nine%. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Synthesis for Width Minimization in the Single-Electron Transistor Array Nanoscale-RingFET: An Analytical Drain Current Model Including SCEs
