PROJECT TITLE :
Subthreshold Mobility in AlGaN/GaN HEMTs
Electron mobility of AlGaN/GaN HEMTs is studied employing a gate admittance-based mostly technique. This analysis extends to electron densities as low as cm with good accuracy. Zero lateral electrical field is applied, in distinction to standard strategies. At these low electron densities, the mobility can be a issue of but that within the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be freelance of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a robust indicator of the epitaxial control of the impurities in the GaN channel.
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