Subthreshold Mobility in AlGaN/GaN HEMTs PROJECT TITLE :Subthreshold Mobility in AlGaN/GaN HEMTsABSTRACT:Electron mobility of AlGaN/GaN HEMTs is studied employing a gate admittance-based mostly technique. This analysis extends to electron densities as low as cm with good accuracy. Zero lateral electrical field is applied, in distinction to standard strategies. At these low electron densities, the mobility can be a issue of but that within the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be freelance of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a robust indicator of the epitaxial control of the impurities in the GaN channel. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Comparative Study of Nb2O5, NbLaO, and La2O3 as Gate Dielectric of InGaZnO Thin-Film Transistor Novel LTPS-TFT Pixel Circuit with OLED Luminance Compensation for 3D AMOLED Displays