FinFETs With a Deep Buried Channel to Reduce the Readout Noise in CMOS Image Sensors PROJECT TITLE :FinFETs With a Deep Buried Channel to Reduce the Readout Noise in CMOS Image SensorsABSTRACT:FinFETs with a deep buried channel (DBC) are proposed for the reduction of readout noise in complementary metal-oxide–semiconductor image sensors (CISs). Simulation results show that the influence of defects at the Si/SiO2 interface on the drain current is reduced for the DBC style as the drain current variation in DBC FinFETs is fifty% smaller than those in surface- and buried-channel metal-oxide–semiconductor field-effect transistor. The potential barriers at the fin sidewalls serve to confine electrons removed from the defects at the Si/SiO2 interface, ensuing in decreased readout noise within the CIS. Did you like this research project? To get this research project Guidelines, Training and Code... Click Here facebook twitter google+ linkedin stumble pinterest Improved Rotor Flux Estimation at Low Speeds for Torque MRAS-Based Sensorless Induction Motor Drives High Gamma Value 3D-Stackable HK/MG-Stacked Tri-Gate Nanowire Poly-Si FETs With Embedded Source/Drain and Back Gate Using Low Thermal Budget Green Nanosecond Laser Crystallization Technology
